RFMW (San Jose, CA) announced design and sales support for TriQuint’s TGM3015-SM, a 3x3mm QFN packaged GaN transistor offering 10W P3dB. Key features include:
- A linear power gain up to 17.1dB within the 0.03 to 3.0GHz bandwidth of this device.
- The PAE3dB of the TGM3015-SM is >62% which typifies TriQuint GaN efficiency.
- Operation from a 32V source, so the TriQuint TGM3015-SM is input matched to 50 ohms and serves applications in Land Mobile Radio, Radar and test instrumentation.
For more information, visit www.rfmw.com.