Cree, Inc. has extended its family of unmatched 50V gallium nitride (GaN) high electron mobility transistors (HEMTs) with a new 50W packaged part that provides high performance broadband solutions for a variety of RF and microwave applications up to 4GHz, including narrow band UHF applications, L- and S-Band applications, and multi-octave bandwidth amplifiers.

Available in two-leaded flange and pill packages, the new CGHV40050 exhibits high efficiency, high gain, and wide bandwidth performance — all of which can be demonstrated using the a 0.8–2.0GHz high power amplifier (HPA) reference design included in the datasheet — in addition to high power density, and low parasitics. Delivering 50W typical output power up to 4GHz operation, the CGHV40050 typically provides 17.5dB small signal gain at 1.8GHz and 55% efficiency at PSAT, and is rated for an operating junction temperature (TJ) of 225°C, and case operating temperatures (TC) spanning -40°C to +80°C.

For more information about the new 50V, 50W Cree® GaN HEMT, including electrical characteristics, typical performance, application circuit schematics, the BOM, and product dimensions, amongst other specifications, please visit http://cree.com/RF/Products/General-Purpose-Broadband-50-V/Packaged-Discrete-Transistors/CGHV40050 to access the product datasheet. Additionally, if you’re attending WAMICON 2015 this week, you can visit Cree at Booth #2.

For all other inquiries, please visit www.cree.com/rf.