Integra Technologies offers Gallium Nitride on Silicon Carbide (GaN-on-SiC) HEMT transistor evaluation kits to designers evaluating this technology for their high power amplifier designs. Each kit is customized to include a designer’s transistor model of choice (partially or fully-matched options are available) and includes a test fixture with one transistor fully mounted and tested, and a…
RF Power Amplifier Module for IFF/SSR Systems Solves Avionic Challenges
Integra Technologies has released a new RF power amplifier module/pallet designed to solve various size, weight, power, and cost challenges (SWaP-C) in high-performance L-band avionic systems. IGNP1011L2400 is a high power GaN-on-SiC RF power amplifier module/pallet that has been designed specifically for IFF/SSR systems operating under either Mode S ELM (48x {32μs on, 18μs off},…
Matched Power Transistor Options For S-Band Radar Bolster Technology Diversity
Integra Technologies has announced a pair of 135 W and a 130 W GaN-on-SiC transistors for S-band radar applications. IGT2731M130 is a 50-Ohm matched high-power GaN HEMT transistor, suppling a minimum of 130 W of peak pulsed power, a gain of 13.5 dB and a drain efficiency of 55%, at pulse conditions of 300 microseconds/10%…