Qorvo^® announced the industry’s first Gallium Nitride on Silicon Carbide (GaN-on-SiC) front-end module (FEM) for the 39GHz 5G frequency band. The FEM’s unique design – a small footprint that integrates two powerful, multi-function GaN MMICs – addresses the complex challenges faced by telecom equipment manufacturers designing 5G base stations.

The dual-channel QPF4005 is built on Qorvo’s highly efficient 0.15-micron GaN-on-SiC technology. It integrates two identical, multi-function GaN MMICs into a small footprint, optimized for phased array element spacing at 39GHz. Each of the MMICs contains a low-noise amplifier, a SPDT switch and a power amplifier.

Telecom equipment manufacturers realize significant improvements in efficiency and operational bandwidth with Qorvo’s GaN-on-SiC technology. Qorvo’s GaN-on-SiC products deliver high power density, reduced size, excellent gain, high reliability and process maturity, with volume production dating back to 2000. More information about the benefits of Qorvo’s GaN-on-SiC is available here, and in this video.

Engineering samples of the 39GHz QPF4005 FEM are available now.

QPF4005 39GHz Dual-Channel GaN MMIC FEM
Frequency Band: 39GHz (37-40.5 GHz)
Dual Channel: 2 GaN MMICs per package
MMICs: 3-stage PA, 3-stage LNA, low-loss T/R switch
Average Power: 23 dBm (supporting QAM256 OFDM modulation)
Package: 4.5x6mm AC-EHSL (designed to meet tough lattice spacing requirements)