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Gallium Nitride Power Switching Devices to be Shown by GaN Systems at ECCE Europe Conference

By Staff Author | September 5, 2013

Leading developer’s Island Technology packs more power in a quarter of the space of silicon devices

OTTAWA, Ontario – August 2013 –GaN Systems is exhibiting at the 15th ECCE European Conference and Exhibition taking place in the historic city of Lille, France from 3–5 September.  

GaN Systems develops the most complete range of gallium nitride power switching solutions available and is focussed on the easy adoption of gallium nitride by design and systems engineers. Its proprietary Island Technology produces devices that are significantly smaller and more efficient than traditional design approaches. The leading specialist in galliium nitride devices for power conversion and control applications, GaN Systems has access to fabs around the globe. The company’s executives will be on-hand to discuss potential applications with attendees.

The European Conference on Power Electronics and Applications is a major world forum for presententation and discussion of the latest development in power electronics, reflecting the increasing importance of this technolopgy in fields such as clean transportation systems for both mass and individual transportation, energy production systems and industrial applications.

For more information, visit www.gansystems.com


Filed Under: RF

 

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