Integra Technologies has announced a pair of 135 W and a 130 W GaN-on-SiC transistors for S-band radar applications. IGT2731M130 is a 50-Ohm matched high-power GaN HEMT transistor, suppling a minimum of 130 W of peak pulsed power, a gain of 13.5 dB and a drain efficiency of 55%, at pulse conditions of 300 microseconds/10% duty cycle. It operates at the instantaneous operating frequency range of 2.7 to 3.1 GHz, and is a depletion mode device. It requires a negative gate bias voltage and bias sequencing.

IGT3135M135 operates at the instantaneous operating frequency range of 3.1 to 3.5 GHz, supplying up to 135 W of peak pulsed power. This transistor is also a 50-Ohm matched high-power GaN HEMT transistor and is also a depletion-mode device that requires a negative gate bias voltage and bias sequencing. Both products come in Integra’s package PL44A1, size is at 0.800 in. (20.32 mm) wide and 0.400 in. (10.16 mm) long. Earless, they are 0.400 in. (10.16 mm) wide and 0.400 in. (10.16 mm) long. Assembled via chip and wire technology, utilizing gold metallization, both units are housed in a metal-based package and sealed with a ceramic-epoxy lid.