Integra Technologies, Inc. (ITI) today announced the development of High Voltage Gallium Nitride on Silicon Carbide (GaN on SiC) technology. Integra’s world class RF design team has launched two new products the IGN2735M5 and MPAG2735M30 as drive stages to the output device IGN2735M250 released last year.
About the IGN2735M5
The PN IGN2735M5 operates over the instantaneous bandwidth covering 2.7 GHz to 3.5 GHz in the S-band frequency range. Under 300µs pulse width and 10% duty cycle pulsing conditions it typically supplies a minimum of 5 watts of peak output power. With breakdown voltages approaching greater than 80V the device is characterized at 32V operating voltage providing over 14 dB of gain and 55 % efficiency.
About the MPAG2735M30
The PN MPAG2735M30 operates over the instantaneous bandwidth covering 2.7 GHz to 3.5 GHz in the S-band frequency range. This device is matched to 50 ohms at the leads and requires no additional matching circuitry on the PCB. Under 300µs pulse width and 10% duty cycle pulsing conditions it typically supplies a minimum of 30 watts of peak output power. With breakdown voltages approaching greater than 80V the device is characterized at 32V operating voltage providing over 11 dB of gain and 50 % efficiency.
About the IGN2735M250
The PN IGN2735M250 operates over the instantaneous bandwidth covering 2.7 GHz to 3.5 GHz in the S-band frequency range. Under 300µs pulse width and 10% duty cycle pulsing conditions it typically supplies a minimum of 250 watts of peak output power. With breakdown voltages approaching greater than 80V the device is characterized at 32V operating voltage providing over 11 dB of gain and 55 % efficiency. The single ended device is housed in a ceramic flanged package providing excellent thermal advantages.
Posted by Sara Cohen, Editorial Intern
June 26, 2012
Filed Under: RF
