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Process for Power Management Applications

By Staff Author | December 2, 2002

PolarFab offers a 1.25-micron, 30 V junction-isolated modular bipolar process for 6 inches wafers. The BP30 process is ideal for power management applications up to 30 V including amplifiers, line drivers, and other linear applications. The PB30 process employs a lateral isolation technique that provides tight packing density without increasing process complexity. A washed emitter in the NPN transistor increases the performance of the chip by keeping the size of the NPN small, which reduces parasitics. The NPN transistor is capable of 3 GHz. The process also includes a 30 V lateral PNP transistor, a 30 V substrate vertical PNP transistor, two implanted resistors, a Schottky diode, a buried zener diode, and high density capacitors.


Filed Under: RF

 

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