Qorvo has announced a new family of 50-volt gallium nitride on silicon carbide (GaN-on-SiC) transistors that improve performance, increase functionality and accelerate development of mission-critical tactical and public safety radios. The transistors are input-matched for wideband applications and feature a compact footprint, enabling smaller, next-generation communications devices.
James Klein, president, Qorvo Infrastructure and Defense Products, said, “Military personnel and first responders must communicate across many channels and have reliable access to wideband capabilities such as data, video and GPS – all in very challenging conditions. The higher voltage of our new transistors at three different power levels ultimately translates into more powerful, more capable and more reliable radios.”
Qorvo is the only supplier of 50-volt wideband-matched GaN-on-SiC transistors. Higher voltage transistors deliver a number of key benefits, including increased output power, reduced current loss, greater reliability, and require fewer transistors in system designs. Additionally, wideband matching increases energy efficiency and allows board designs to be optimized for specialized military and first responder devices. Qorvo’s newest transistors are designed for space-constrained, mission-critical applications ranging from military and land-mobile radio communications to avionics and test instruments.
Qorvo offers a variety of high power and high frequency RF transistors, including GaAs pHEMTs and GaN HEMTs, in both die and packaged form. More information about these products is available at: http://www.qorvo.com/products/discrete-transistors.
Qorvo’s market-leading portfolio of GaN products will be showcased at the 2017 International Microwave Symposium (#ims2017) in Honolulu, Hawaii, June 4-9, in booth #1510. To learn more about Qorvo’s high-performance solutions, visit: http://www.qorvo.com/gan.