Modelithics and Tagore Technology announce the release of a new Modelithics non-linear model for Tagore Technology TA9210D RF GaN transistor. Modelithics is the leading independent provider of linear and non-linear RF/microwave models and Tagore Technology is a fabless semiconductor company providing gallium-nitride-on-silicon carbide (GaN-on-SiC) and gallium-nitride-on-silicon (GaN-on-Si) solutions for RF and power-management applications.
This large signal model for the Tagore Technology TA9210D 12.5 W RF GaN transistor in a 32-pin QFN package is validated from DC to 8 GHz. It is based on the extraction of a Modelithics-Enhanced Angelov non-linear model that is valid for Class AB and Class C Operation (Doherty design) and validated against the following Modelithics measurement data: Pulsed I-V, S-parameters (0.2 to 8 GHz), and large signal load pull in the 0.8 to 4 GHz band as well in Tagore’s evaluation board measurements. In addition, the model is temperature-dependent and includes electrical thermal capability.
The Modelithics non-linear model is available within the Modelithics COMPLETE Library, which is an indispensable collection of simulation models for all types of passive and active RF and microwave devices engineered to enable designers to go from concept to product faster and easier. The Modelithics COMPLETE Library is available for Keysight Technologies’ PathWave Advanced Design System (ADS), Keysight Technologies’ PathWave RF Synthesis (Genesys), Cadence AWR Design Environment, and other simulators.
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