5G Technology World

  • 5G Technology and Engineering
  • FAQs
  • Apps
  • Devices
  • IoT
  • RF
  • Radar
  • Wireless Design
  • Learn
    • 5G Videos
    • Ebooks
    • EE Training Days
    • FAQs
    • Learning Center
    • Tech Toolboxes
    • Webinars/Digital Events
  • Handbooks
    • 2024
    • 2023
    • 2022
    • 2021
  • Resources
    • Design Guide Library
    • EE World Digital Issues
    • Engineering Diversity & Inclusion
    • Engineering Training Days
    • LEAP Awards
  • Advertise
  • Subscribe

Gate driver controls MOSFETS in telecom power supplies

By Martin Rowe | December 10, 2020

The 2EDL8x2x from Infineon Technologies drives medium-voltage power MOSFETS in half-bridge applications for DC-DC converters.

The wired and wireless telecom infrastructure, like all electronic devices, needs power. Indeed, power consumption in 5G networks is high on the list of issues that need addressing. The EiceDRIVER 2EDL8 gate driver IC from Infineon Technologies lets you drive half-bridge circuits in DC-DC telecom “bricks” used in mobile network infrastructure. These dual-channel junction-isolated gate driver ICs let you design for high power density, high efficiency, and robustness in isolated DC-DC step-down converters/telecom bricks used in 5G and LTE macro base stations.

The 2EDL8 family’s four variants offer two pull-up currents and two input configurations. Use the 3 A version existing designs, with Infineon recommending the 4A version for new designs to reduce MOSFET switching losses.

The 2EDL802x lets each channel operate independently. You can use the devices for diagonally driven full-bridges on the primary side, as well as for the synchronous rectification stage on the secondary side to reduce the losses during the freewheeling phase. The 2EDL812x has a differential input structure and built-in shoot-through protection for non-diagonally driven primary-side half-bridge stages in DC-DC brick converters.

Typical telecom DC-DC converter application.

The 2EDL8 features an integrated 120 V bootstrap diode and channel-to-channel propagation delay matching of ±2 ns typically. All products in the family have industry-standard PG-VDSON-8 leadless packages and pin-out.


Filed Under: Uncategorized
Tagged With: infineontechnologiesinc
 

Next Article

← Previous Article
Next Article →

Related Articles Read More >

URLLC eMBB 3GPP
How do 5G eMBB and FWA data services compare?
Renesas agrees to acquire Sequans
LTE Cat4 module supports MIMO, Wi-Fi, Bluetooth
RF driver powers four high-power amplifiers to 1.7 kW

Featured Contributions

  • Overcome Open RAN test and certification challenges
  • Wireless engineers need AI to build networks
  • Why AI chips need PCIe 7.0 IP interconnects
  • circuit board timing How timing and synchronization improve 5G spectrum efficiency
  • Wi-Fi 7 and 5G for FWA need testing
More Featured Contributions

EE TECH TOOLBOX

“ee
Tech Toolbox: 5G Technology
This Tech Toolbox covers the basics of 5G technology plus a story about how engineers designed and built a prototype DSL router mostly from old cellphone parts. Download this first 5G/wired/wireless communications Tech Toolbox to learn more!

EE LEARNING CENTER

EE Learning Center
“5g
EXPAND YOUR KNOWLEDGE AND STAY CONNECTED
Get the latest info on technologies, tools and strategies for EE professionals.

Engineering Training Days

engineering
“bills
5G Technology World
  • Enews Signup
  • EE World Online
  • DesignFast
  • EDABoard Forums
  • Electro-Tech-Online Forums
  • Microcontroller Tips
  • Analogic Tips
  • Connector Tips
  • Engineer’s Garage
  • EV Engineering
  • Power Electronic Tips
  • Sensor Tips
  • Test and Measurement Tips
  • About Us
  • Contact Us
  • Advertise

Copyright © 2025 WTWH Media LLC. All Rights Reserved. The material on this site may not be reproduced, distributed, transmitted, cached or otherwise used, except with the prior written permission of WTWH Media
Privacy Policy

Search 5G Technology World